Invention Grant
- Patent Title: Bandgap type reference voltage generation circuit
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Application No.: US17393758Application Date: 2021-08-04
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Publication No.: US11720137B2Publication Date: 2023-08-08
- Inventor: Katsuyuki Ikeuchi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JP 21040181 2021.03.12
- Main IPC: G05F3/30
- IPC: G05F3/30

Abstract:
According to an embodiment, a bandgap type reference voltage generation circuit includes a first node that is connected to an output terminal, second and third nodes that are connected to current sources, a fourth node, first and second bipolar junction transistors with bases that are connected to the first node, a third bipolar junction transistor that is provided with an emitter-collector path that is connected between the second node and the fourth node and amplifies an output current of the first bipolar junction transistor, and a fourth bipolar junction transistor that is provided with an emitter-collector path that is connected between the third node and the fourth node and amplifies an output current of the second bipolar junction transistor.
Public/Granted literature
- US20220291707A1 BANDGAP TYPE REFERENCE VOLTAGE GENERATION CIRCUIT Public/Granted day:2022-09-15
Information query
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