Invention Grant
- Patent Title: Error correction management for a memory device
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Application No.: US17518160Application Date: 2021-11-03
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Publication No.: US11720443B2Publication Date: 2023-08-08
- Inventor: Aaron P. Boehm , Scott E. Schaefer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C11/409 ; G06F12/14

Abstract:
Methods, systems, and devices for error correction management are described. A system may include a memory device that supports internal detection and correction of corrupted data, and whether such detection and correction functionality is operating properly may be evaluated. A known error may be included (e.g., intentionally introduced) into either data stored at the memory device or an associated error correction codeword, among other options, and data or other indications subsequently generated by the memory device may be evaluated for correctness in view of the error. Thus, either the memory device or a host device coupled with the memory device, among other devices, may determine whether error detection and correction functionality internal to the memory device is operating properly.
Public/Granted literature
- US20220058084A1 ERROR CORRECTION MANAGEMENT FOR A MEMORY DEVICE Public/Granted day:2022-02-24
Information query