A structure includes a first transistor of a first type, the first transistor including a first channel, a first conductive segment, and a second conductive segment, a second transistor of a second type, the second transistor including a second channel, a third conductive segment, and a fourth conductive segment, and a gate. The first channel extends through the gate between the first and second conductive segments, the second channel extends through the gate between the third and fourth conductive segments and is aligned with the first channel at a center of the first transistor, the first and third conductive segments extend away from the center of the first transistor in opposite directions, and the second and fourth conductive segments extend away from the center of the first transistor in opposite directions.