Invention Grant
- Patent Title: Methods of charging local input/output lines of memory devices, and related devices and systems
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Application No.: US18051579Application Date: 2022-11-01
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Publication No.: US11721375B2Publication Date: 2023-08-08
- Inventor: Jin Lan , Genta Takaya
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc
- Current Assignee: Micron Technology, Inc
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- The original application number of the division: US16858370 2020.04.24
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C7/22 ; G11C7/12 ; G11C7/10

Abstract:
Methods of operating a memory device are disclosed. A method may include receiving a write command, and in response to the write command, performing a write operation without precharging a local input/output line subsequent to receipt of the write command and prior to performing the write operation. Another method may include receiving a read command, performing a read operation in response to the read command, and receiving an additional command without precharging the local input/output line subsequent to performing the read operation and prior to receiving the additional command. Memory devices and systems are also disclosed.
Public/Granted literature
- US20230116292A1 METHODS OF CHARGING LOCAL INPUT/OUTPUT LINES OF MEMORY DEVICES, AND RELATED DEVICES AND SYSTEMS Public/Granted day:2023-04-13
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