- Patent Title: Refresh circuit and refresh method of a semiconductor memory having a signal generation module configured to generate an inversion signal and carry signals based on a refresh command; an adjustment unit to generate an inversion adjustment signal according to the inversion
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Application No.: US17658287Application Date: 2022-04-07
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Publication No.: US11721383B2Publication Date: 2023-08-08
- Inventor: Jixing Chen
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2111210522.0 2021.10.18
- Main IPC: G11C11/406
- IPC: G11C11/406 ; H03K3/0233 ; G11C11/4093

Abstract:
A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.
Public/Granted literature
- US20230120815A1 REFRESH CIRCUIT, REFRESH METHOD AND SEMICONDUCTOR MEMORY Public/Granted day:2023-04-20
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