Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US17826483Application Date: 2022-05-27
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Publication No.: US11721531B2Publication Date: 2023-08-08
- Inventor: Ryo Sasaki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JP 19182194 2019.10.02 JP 20144810 2020.08.28
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/683

Abstract:
A plasma processing apparatus includes a substrate support having a substrate supporting portion on which a substrate is placed and a peripheral portion surrounding the substrate supporting portion, a conductive focus ring placed on the peripheral portion of the substrate support, a cover ring surrounding an outer periphery of the substrate support and formed of a dielectric material, a conductive ring placed on the cover ring, and a radio frequency power supply electrically coupled to the substrate support. A first surface on an outer peripheral portion of the focus ring and a second surface on an inner peripheral portion of the conductive ring are spaced apart from each other while facing each other. Further, the cover ring has a spacing portion that separates the focus ring from the conductive ring.
Public/Granted literature
- US20220285137A1 PLASMA PROCESSING APPARATUS Public/Granted day:2022-09-08
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