Invention Grant
- Patent Title: Method and system for regulating plasma dicing rates
-
Application No.: US16721083Application Date: 2019-12-19
-
Publication No.: US11721586B2Publication Date: 2023-08-08
- Inventor: Antonius Hendrikus Jozef Kamphuis , Ernst Eiper , Johannes Cobussen , Chantal Dijkstra
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L21/82
- IPC: H01L21/82 ; G01R31/28 ; H01L21/66

Abstract:
Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.
Public/Granted literature
- US20210193524A1 Method and System for Regulating Plasma Dicing Rates Public/Granted day:2021-06-24
Information query
IPC分类: