Invention Grant
- Patent Title: Semiconductor testkey pattern and test method thereof
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Application No.: US17216697Application Date: 2021-03-30
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Publication No.: US11721599B2Publication Date: 2023-08-08
- Inventor: Linshan Yuan , Guang Yang , Jinjian Ouyang , Jiawei Lyu , Chin-Chun Huang , Wen Yi Tan
- Applicant: United Semiconductor (Xiamen) Co., Ltd.
- Applicant Address: CN Fujian
- Assignee: United Semiconductor (Xiamen) Co., Ltd.
- Current Assignee: United Semiconductor (Xiamen) Co., Ltd.
- Current Assignee Address: CN Fujian
- Agent Winston Hsu
- Priority: CN 2110234796.7 2021.03.03
- Main IPC: G01R27/08
- IPC: G01R27/08 ; H01L21/66 ; G01R27/02 ; G01R27/14 ; G01R17/10 ; H01L27/06 ; G01R31/28 ; G01R27/26
Abstract:
The invention provides a semiconductor testkey pattern, the semiconductor testkey pattern includes a high density device region and a plurality of resistor pairs surrounding the high density device region, wherein each resistor pair includes two mutually symmetrical resistor patterns.
Public/Granted literature
- US20220285235A1 Semiconductor testkey pattern and test method thereof Public/Granted day:2022-09-08
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