In a method for forming an integrated structure, a top dielectric layer is formed over a top surface of a substrate. The top dielectric layer includes a plurality of vias that are formed through the top dielectric layer and extend into the substrate. A bottom dielectric layer is formed on a bottom surface of the substrate. An isolation opening and a plurality of contact openings are further formed in the bottom dielectric layer and the substrate, where the isolation opening passes through the bottom dielectric layer and extends from the bottom surface to the top surface of the substrate. The isolation opening is filled with an insulating layer to form an isolation trench. The plurality of contact openings are filled with a conductive layer to form a plurality of through silicon contacts (TSCs). A conductive plate is further formed over the bottom dielectric layer.