The present disclosure provides a method for manufacturing a semiconductor structure. The method includes providing an underlying semiconductor layer; depositing an insulation layer over the underlying semiconductor layer; forming a first through semiconductor via extending continuously through the insulation layer; forming a second through semiconductor via extending continuously through the insulation layer; etching a portion of the insulation layer to expose a first upper end of the first through semiconductor via above the insulation layer and a second upper end of the second through semiconductor via above the insulation layer; and forming an upper conductive connecting portion laterally connected to a first upper lateral surface of the first upper end and a second upper lateral surface of the second upper end by a self-aligned deposition process.