Invention Grant
- Patent Title: Isolation bonding film for semiconductor packages and methods of forming the same
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Application No.: US17408662Application Date: 2021-08-23
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Publication No.: US11721666B2Publication Date: 2023-08-08
- Inventor: Ming-Tsu Chung , Ku-Feng Yang , Yung-Chi Lin , Wen-Chih Chiou , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16456678 2019.06.28
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/48 ; H01L23/00 ; H01L25/00 ; H01L21/683 ; H01L21/82

Abstract:
A semiconductor package including an improved isolation bonding film and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first die bonded to a package substrate, the first die including vias extending through a substrate, the vias extending above a top surface of the substrate; a first dielectric film extending along a top surface of the package substrate, along the top surface of the substrate, and along sidewalls of the first die, the vias extending through the first dielectric film; a second die bonded to the first dielectric film and the vias; and an encapsulant over the package substrate, the first die, the first dielectric film, and the second die.
Public/Granted literature
- US20210384158A1 Isolation Bonding Film for Semiconductor Packages and Methods of Forming the Same Public/Granted day:2021-12-09
Information query
IPC分类: