Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US17459866Application Date: 2021-08-27
-
Publication No.: US11721672B2Publication Date: 2023-08-08
- Inventor: Yuichi Sano , Masayuki Miura , Kazuma Hasegawa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 21035733 2021.03.05
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L29/417

Abstract:
A semiconductor device includes a first stacked body including a plurality of first semiconductor chips stacked along a first direction, each of the first semiconductor chips being offset from the other first semiconductor chips along a second direction perpendicular to the first direction; a first columnar electrode connected to an electrode pad of the first stacked body, and extending in the first direction; a second stacked body including a plurality of second semiconductor chips stacked along the first direction, each of the second semiconductor chips being offset from the other second semiconductor chips along the second direction, the second stacked body having a height larger than the first stacked body and overlap at least a portion of the first stacked body when viewed from the top; and a second columnar electrode connected to an electrode pad of the second stacked body, and extending in the first direction.
Public/Granted literature
- US20220285320A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-09-08
Information query
IPC分类: