Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US16969200Application Date: 2020-07-03
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Publication No.: US11721692B2Publication Date: 2023-08-08
- Inventor: Qiyue Zhao , Wuhao Gao , Zu Er Chen
- Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Applicant Address: CN Zhuhai
- Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Current Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Zhuhai
- Agency: McCoy Russell LLP
- International Application: PCT/CN2020/100142 2020.07.03
- International Announcement: WO2022/000472A 2022.01.06
- Date entered country: 2020-08-12
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/085 ; H01L21/02 ; H01L21/8252 ; H01L23/29 ; H01L23/31 ; H01L29/20 ; H01L29/205 ; H01L29/66 ; H01L27/06 ; H01L27/095

Abstract:
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer, a first gate, a second gate, and a first passivation layer. The first gate and the second gate are on the III-V material layer. The first passivation layer is on the first gate. A first activation ratio of an element in the first gate is different from a second activation ratio of the element in the second gate.
Public/Granted literature
- US20220005806A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2022-01-06
Information query
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