A semiconductor integrated circuit includes first to fourth transistor arrangement regions. A portion of the third transistor arrangement region is located on a second side in a first direction of the second transistor arrangement region. A portion of the first transistor arrangement region connected to the second transistor arrangement region is sandwiched in the first direction by the second transistor arrangement region and the portion of the third transistor arrangement region. The portion of the first transistor arrangement region is located on a first side in the first direction of the fourth transistor arrangement region. The portion of the third transistor arrangement region connected to the fourth transistor arrangement region is sandwiched in the first direction by the fourth transistor arrangement region and the portion of the first transistor arrangement region.