Invention Grant
- Patent Title: Split stack triple height cell
-
Application No.: US17148652Application Date: 2021-01-14
-
Publication No.: US11721698B2Publication Date: 2023-08-08
- Inventor: Guru Prasad
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L27/092
- IPC: H01L27/092 ; G06F30/392 ; G06F117/12 ; G06F119/06

Abstract:
Split stack triple height cells and methods of generating layouts of same are described herein. The structure includes a circuit formed within three stacked rows. The circuit includes a first stage having a first plurality of electrical components and a second stage having a second plurality of electrical components. The first row includes a first electrical component of the first plurality of electrical components within a top portion of the first row. A first electrical component of the second plurality of electrical components is within a bottom portion of the first row and a top portion of the second row. A second electrical component of the second plurality of electrical components is within a top portion of the third row and a bottom portion of the second row. A second electrical component of the first plurality of electrical components is within a bottom portion of the third row.
Public/Granted literature
- US20210327878A1 Split Stack Triple Height Cell Public/Granted day:2021-10-21
Information query
IPC分类: