- Patent Title: Horizontal current bipolar transistor with silicon-germanium base
-
Application No.: US17393887Application Date: 2021-08-04
-
Publication No.: US11721726B2Publication Date: 2023-08-08
- Inventor: Tomislav Suligoj , Marko Koricic , Josip Zilak , Zeljko Osrecki
- Applicant: University of Zagreb, Faculty of Electrical Engineering and Computing
- Applicant Address: HR Zagreb
- Assignee: University of Zagreb, Faculty of Electrical Engineering and Computing
- Current Assignee: University of Zagreb, Faculty of Electrical Engineering and Computing
- Current Assignee Address: HR Zagreb
- Agency: Stinson LLP
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L29/417 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L29/737 ; H01L29/40 ; H01L29/735 ; H01L21/8249
Abstract:
A semiconductor device including a Horizontal Current Bipolar Transistor (HCBT) and methods of manufacture. The device has a semiconductor substrate of a first conductivity type defining a wafer plane parallel to the semiconductor substrate and has a base region and a collector region forming a first metallurgical junction. The device also has an emitter region forming a second metallurgical junction with the base region. A flat portion of the first metallurgical junction and a flat portion of the second metallurgical junction are substantially parallel to each other and close an acute angle with the wafer plane. At least a portion of the base region comprises silicon-germanium alloy or silicon-germanium-carbon alloy.
Information query
IPC分类:
