Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17396783Application Date: 2021-08-09
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Publication No.: US11721740B2Publication Date: 2023-08-08
- Inventor: Jui-Fen Chien , Hsiao-Kuan Wei , Hsien-Ming Lee , Chin-You Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/49 ; H01L29/06 ; H01L27/092 ; H01L29/66 ; H01L21/28 ; H01L29/165

Abstract:
Provided is a semiconductor device including a first n-type transistor comprising a first work function layer, the first work function layer comprising a first underlying layer; and a second n-type transistor comprising a second work function layer, the second work function layer comprising a second underlying layer. The first and second underlying layers each comprises a metal nitride layer with at least two kinds of metals, and a thickness of the first underlying layer is greater than a thickness of the second underlying layer. A method of manufacturing a gate structure for a semiconductor device is also provided.
Public/Granted literature
- US20210367056A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-11-25
Information query
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