Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17399580Application Date: 2021-08-11
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Publication No.: US11721750B2Publication Date: 2023-08-08
- Inventor: Takeshi Suwa , Tomoko Matsudai , Yoko Iwakaji , Hiroko Itokazu
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 21039143 2021.03.11
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/417 ; H01L29/10
Abstract:
A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes first to seventh layers. The second of a second conductivity type is provided between the first layer of a first conductivity type and the first electrode. The third and fourth layers of the first conductivity type are arranged along the second layer between the second layer and the first electrode. The fifth layer of the second conductivity type is provided between the second electrode and the first layer. The sixth and seventh layers are arranged along the fifth layer between the first and fifth layers. The sixth and seventh layers include the first-conductivity-type impurities with first and second surface densities, respectively. The first surface density is greater than the second surface density.
Public/Granted literature
- US20220293776A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-15
Information query
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