Invention Grant
- Patent Title: Methods of forming semiconductor power devices having graded lateral doping
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Application No.: US17669409Application Date: 2022-02-11
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Publication No.: US11721755B2Publication Date: 2023-08-08
- Inventor: Philipp Steinmann , Edward Van Brunt , Jae Hyung Park , Vaishno Dasika
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16
Abstract:
A semiconductor device includes a semiconductor layer structure comprising a source/drain region, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer. The source/drain region comprises a first portion comprising a first dopant concentration and a second portion comprising a second dopant concentration. The second portion is closer to a center of the gate electrode than the first portion.
Public/Granted literature
- US20220165876A1 SEMICONDUCTOR POWER DEVICES HAVING GRADED LATERAL DOPING AND METHODS OF FORMING SUCH DEVICES Public/Granted day:2022-05-26
Information query
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