Invention Grant
- Patent Title: Impedance measurement for a haptic load
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Application No.: US17148100Application Date: 2021-01-13
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Publication No.: US11722085B2Publication Date: 2023-08-08
- Inventor: Liangguo Shen , Joseph Dale Rutkowski , Joshua Zazzera , Nathaniel Salazar
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: QUALCOMM Incorporated
- Main IPC: H02P25/034
- IPC: H02P25/034 ; G08B6/00

Abstract:
In some implementations, a measurement circuit may drive, using a first transistor, a first node of a haptic load. The measurement circuit may trigger a first comparator when a voltage driving the haptic load satisfies a first condition. The first comparator may have a first node connected, in parallel, to a drain of a second transistor and may have a second node connected to the first node of the haptic load. Additionally, the second transistor may have a gate connected to a gate of the first transistor and may have the drain connected to a first reference current.
Public/Granted literature
- US20220224269A1 IMPEDANCE MEASUREMENT FOR A HAPTIC LOAD Public/Granted day:2022-07-14
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