Invention Grant
- Patent Title: Memory cell and memory device with the same
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Application No.: US17193327Application Date: 2021-03-05
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Publication No.: US11723186B2Publication Date: 2023-08-08
- Inventor: Seung Wook Ryu , Kyoung Ryul Yoon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR 20200134018 2020.10.16
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H10B12/00 ; H01L29/786 ; H01L29/06 ; H01L49/02 ; H01L29/423
Abstract:
A memory device including a substrate; a bit line laterally oriented to be parallel to the substrate; a transistor including two channels that are laterally oriented from the bit line and a word line that is vertically oriented and surrounds the two channels; and a capacitor laterally oriented from the transistor.
Public/Granted literature
- US20220122975A1 MEMORY CELL AND MEMORY DEVICE WITH THE SAME Public/Granted day:2022-04-21
Information query
IPC分类:
