Invention Grant
- Patent Title: Method of forming three-dimensional memory device with epitaxially grown layers
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Application No.: US16896792Application Date: 2020-06-09
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Publication No.: US11723201B2Publication Date: 2023-08-08
- Inventor: Linchun Wu
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Anova Law Group, PLLC
- Priority: CN 2010054215.7 2020.01.17
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B43/10 ; H10B43/35

Abstract:
Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a 3D NAND memory device includes a substrate, a layer stack over the substrate, a first epitaxial layer, a second epitaxial layer, first array common sources (ACS's), and second ACS's. The layer stack includes first stack layers and second stack layers that are alternately stacked. The first epitaxial layer is deposited on a side portion of a channel layer that extends through the layer stack. The second epitaxial layer is deposited on the substrate. The first ACS's and a portion of the layer stack are between the second ACS's.
Public/Granted literature
- US20210225865A1 THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2021-07-22
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