Invention Grant
- Patent Title: Semiconductor structure and manufacturing method of the same
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Application No.: US17244768Application Date: 2021-04-29
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Publication No.: US11723219B2Publication Date: 2023-08-08
- Inventor: Harry-Hak-Lay Chuang , Sheng-Huang Huang , Keng-Ming Kuo , Hung Cho Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- The original application number of the division: US16884883 2020.05.27
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/80
Abstract:
The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.
Public/Granted literature
- US20210249471A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2021-08-12
Information query
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