Invention Grant
- Patent Title: Memory read circuitry with a flipped voltage follower
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Application No.: US17333109Application Date: 2021-05-28
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Publication No.: US11742012B2Publication Date: 2023-08-29
- Inventor: Karthik Ramanan , Jon Scott Choy , Padmaraj Sanjeevarao
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C7/06 ; G11C7/08 ; G11C11/4074 ; G11C13/00
Abstract:
A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.
Public/Granted literature
- US20220383925A1 MEMORY READ CIRCUITRY WITH A FLIPPED VOLTAGE FOLLOWER Public/Granted day:2022-12-01
Information query
