Invention Grant
- Patent Title: Memory device with write pulse trimming
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Application No.: US17815076Application Date: 2022-07-26
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Publication No.: US11742021B2Publication Date: 2023-08-29
- Inventor: Hiroki Noguchi , Yu-Der Chih , Yih Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- The original application number of the division: US17140605 2021.01.04
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C13/00 ; G11C11/22 ; G11C11/16

Abstract:
A memory device includes: a memory cell array comprising a plurality of memory cells; a temperature sensor configured to detect a temperature of the memory cell array; a write circuit configured to write data into the plurality of memory cells; and a controller coupled to the temperature sensor and the write circuit, wherein the controller is configured to determine a target write pulse width used by the write circuit based on the detected temperature of the memory device.
Public/Granted literature
- US20220366982A1 MEMORY DEVICE WITH WRITE PULSE TRIMMING Public/Granted day:2022-11-17
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