Invention Grant
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
-
Application No.: US17540694Application Date: 2021-12-02
-
Publication No.: US11742022B2Publication Date: 2023-08-29
- Inventor: Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor Inc.
- Current Assignee: Zeno Semiconductor Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C14/00 ; G11C11/404 ; H01L29/78 ; G11C11/4072 ; G11C13/00 ; H10B12/00 ; H10B63/00 ; H10N70/00 ; H10N70/20 ; G11C11/21 ; G11C11/407
Abstract:
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.
Public/Granted literature
Information query
