Invention Grant
- Patent Title: High current integrated circuit-based transformer
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Application No.: US16449673Application Date: 2019-06-24
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Publication No.: US11742130B2Publication Date: 2023-08-29
- Inventor: Lukas Frederik Tiemeijer , Bartholomeus Wilhelmus Christiaan Hovens , Maarten Lont
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L27/28
- IPC: H01L27/28 ; H01F27/28 ; H01L23/522 ; H01L23/528 ; H01L23/66 ; H01L49/02 ; H03F3/21 ; H03F3/45

Abstract:
An integrated circuit transformer (150) is formed with a primary winding (91) located in at least a first winding layer having a first thickness, a secondary winding (92) located in at least the first winding layer and having a first center point at the first side of the transformer and two secondary terminals at a second, opposite side of the transformer, and a first center tap feed line (81) located along a symmetry axis of the transformer in an upper metal layer having a second thickness that is at least equivalent to the first thickness of the first winding layer, wherein the first center tap feed line has a direct electrical connection to the first center point in the secondary winding.
Information query
IPC分类: