Invention Grant
- Patent Title: Method of filling gaps with carbon and nitrogen doped film
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Application No.: US17645867Application Date: 2021-12-23
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Publication No.: US11742201B2Publication Date: 2023-08-29
- Inventor: Wan-Yi Kao , Chung-Chi Ko
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: C23C16/56
- IPC: C23C16/56 ; H01L21/02 ; C23C16/04 ; C23C16/40 ; C23C16/455 ; H01L21/762 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/78
Abstract:
A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.
Public/Granted literature
- US20220122834A1 Method of Filling Gaps with Carbon and Nitrogen Doped Film Public/Granted day:2022-04-21
Information query
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