Method for growing III-V compound semiconductor thin films on silicon-on-insulators

Invention Grant

US11742203B2 Method for growing III-V compound semiconductor thin films on silicon-on-insulators 有权

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Patent Title: Method for growing III-V compound semiconductor thin films on silicon-on-insulators
Application No.: US16801224

Application Date: 2020-02-26
Publication No.: US11742203B2

Publication Date: 2023-08-29
Inventor: Kei May Lau , Yu Han
Applicant: The Hong Kong University of Science and Technology
Applicant Address: CN Hong Kong
Assignee: The Hong Kong University of Science and Technology
Current Assignee: The Hong Kong University of Science and Technology
Current Assignee Address: CN Hong Kong
Agency: Spruson & Ferguson (Hong Kong) Limited
Main IPC: H01L21/306
IPC: H01L21/306 ; H01L21/02 ; G02B6/12 ; G02B6/136 ; G02B6/13

Method for growing III-V compound semiconductor thin films on silicon-on-insulators

Abstract:

The present disclosure relates to a method for growing III-V compound semiconductors on silicon-on-insulators. Starting from {111}-oriented Si seed surfaces between a buried oxide layer and a patterned mask layer, the III-V compound semiconductor is grown within lateral trenches by metal organic chemical vapor deposition such that the non-defective portion of the III-V compound semiconductor formed on the buried oxide layer is substantially free of crystalline defects and has high crystalline quality.

Public/Granted literature

US20210265162A1 METHOD FOR GROWING III-V COMPOUND SEMICONDUCTORS ON SILICON-ON-INSULATORS Public/Granted day:2021-08-26

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）