Some embodiments relate to a semiconductor structure including a method for forming a semiconductor structure. The method includes forming a lower conductive structure within a first dielectric layer over a substrate. An upper dielectric structure is formed over the lower conductive structure. The upper dielectric structure comprises sidewalls defining an opening over the lower conductive structure. A first liner layer is selectively deposited along the sidewalls of the upper dielectric structure. A conductive body is formed within the opening and over the lower conductive structure. The conductive body has a bottom surface directly overlying a middle region of the lower conductive structure. The first layer is laterally offset from the middle region of the lower conductive structure by a non-zero distance.