- Patent Title: Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component
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Application No.: US17016941Application Date: 2020-09-10
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Publication No.: US11744158B2Publication Date: 2023-08-29
- Inventor: Bernhard Wagner , Fabian Lofink , Dirk Kaden , Simon Fichtner
- Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. , Christian-Albrechts-Universitaet zu Kiel
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.,Christian-Albrechts-Universitaet zu Kiel
- Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.,Christian-Albrechts-Universitaet zu Kiel
- Current Assignee Address: DE Munich; DE Kiel
- Agency: Perkins Coie LLP
- Agent Michael A. Glenn
- Priority: DE 2018203812.0 2018.03.13
- Main IPC: H01L41/187
- IPC: H01L41/187 ; H10N30/853 ; B81B7/02 ; H10N30/045 ; H10N30/50 ; H10N30/00 ; H10N30/20
Abstract:
A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.
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