Invention Grant
- Patent Title: Molybdenum compound and method of manufacturing integrated circuit device using the same
-
Application No.: US17072096Application Date: 2020-10-16
-
Publication No.: US11746121B2Publication Date: 2023-09-05
- Inventor: Gyuhee Park , Younjoung Cho , Haruyoshi Sato , Kazuki Harano , Hiroyuki Uchiuzou
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,ADEKA CORPORATION
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,ADEKA CORPORATION
- Current Assignee Address: KR Suwon-si; JP Tokyo
- Agency: Lee IP Law, P.C.
- Priority: KR 20200036442 2020.03.25
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C07F11/00 ; C01G39/02 ; C23C16/34 ; C01B21/06
Abstract:
A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
Public/Granted literature
- US20210300955A1 MOLYBDENUM COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME Public/Granted day:2021-09-30
Information query
IPC分类:
