Invention Grant
- Patent Title: Chemical mechanical polishing solution
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Application No.: US16958391Application Date: 2018-12-26
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Publication No.: US11746257B2Publication Date: 2023-09-05
- Inventor: Jian Ma , Jianfen Jing , Junya Yang , Kai Song , Xinyuan Cai , Guohao Wang , Ying Yao , Pengcheng Bian
- Applicant: Anji Microelectronics (Shanghai) Co., Ltd.
- Applicant Address: CN Shangai
- Assignee: Anji Microelectronics (Shanghai) Co., Ltd.
- Current Assignee: Anji Microelectronics (Shanghai) Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Dentons US LLP
- Priority: CN 1711439569.8 2017.12.27
- International Application: PCT/CN2018/124049 2018.12.26
- International Announcement: WO2019/129103A 2019.07.04
- Date entered country: 2020-12-01
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/306 ; H01L21/321
Abstract:
The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.
Public/Granted literature
- US20210139740A1 CHEMICAL MECHANICAL POLISHING SOLUTION Public/Granted day:2021-05-13
Information query
