Invention Grant
- Patent Title: Quantum dot composite material, preparation method, and semiconductor device
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Application No.: US17524339Application Date: 2021-11-11
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Publication No.: US11746292B2Publication Date: 2023-09-05
- Inventor: Lei Qian , Yixing Yang , Zheng Liu
- Applicant: TCL TECHNOLOGY GROUP CORPORATION
- Applicant Address: CN Huizhou
- Assignee: TCL TECHNOLOGY GROUP CORPORATION
- Current Assignee: TCL TECHNOLOGY GROUP CORPORATION
- Current Assignee Address: CN Huizhou
- Agency: Anova Law Group, PLLC
- Priority: CN 1611255822.X 2016.12.30
- Main IPC: C09K11/88
- IPC: C09K11/88 ; H10K50/115 ; C09K11/56 ; B82Y30/00 ; H10K50/15 ; H10K50/16 ; H10K50/17 ; H10K85/10 ; H10K85/60 ; H10K102/00 ; H10K102/10 ; B82Y20/00 ; B82Y40/00 ; H01L31/0352

Abstract:
A quantum dot (QD) composite material includes at least three QD structural units arranged sequentially along a radial direction. Among the at least three QD structural units, each QD structural unit at a center of the QD composite material and each QD structural unit at a surface of the QD composite material have a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface, along the radial direction, energy levels of adjacent gradient alloy composition structures of the QD structure units are continuous. A QD structural unit located between the QD structural units at the center and the QD structural units at the surface have a homogeneous alloy composition structure.
Public/Granted literature
- US20220064528A1 QUANTUM DOT COMPOSITE MATERIAL, PREPARATION METHOD, AND SEMICONDUCTOR DEVICE Public/Granted day:2022-03-03
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