Invention Grant
- Patent Title: Method for metal layer formation
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Application No.: US16519673Application Date: 2019-07-23
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Publication No.: US11746421B2Publication Date: 2023-09-05
- Inventor: Natalia Zamoshchik , Konstantin Livanov , Yana Sheynin
- Applicant: OrelTech Ltd.
- Applicant Address: IL Rehovot
- Assignee: ORELTECH LTD.
- Current Assignee: ORELTECH LTD.
- Current Assignee Address: IL Rehovot
- Agency: M&B IP Analysts, LLC
- Main IPC: C23C18/14
- IPC: C23C18/14 ; C23C18/16 ; C23C18/31 ; C09D11/52 ; B22F1/18

Abstract:
A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.
Public/Granted literature
- US20200017974A1 METHOD FOR METAL LAYER FORMATION Public/Granted day:2020-01-16
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