Invention Grant
- Patent Title: Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions
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Application No.: US17406839Application Date: 2021-08-19
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Publication No.: US11746957B2Publication Date: 2023-09-05
- Inventor: Mohamed M. Hilali
- Applicant: Zhejiang Kaiying New Materials Co., Ltd.
- Applicant Address: CN Zhejiang
- Assignee: Zhejiang Kaiying New Materials Co., Ltd.
- Current Assignee: Zhejiang Kaiying New Materials Co., Ltd.
- Current Assignee Address: CN Zhejiang
- The original application number of the division: US16857627 2020.04.24
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/0236 ; H01L31/036 ; H01L31/068 ; H01L31/072 ; H01L31/18 ; F17C3/02 ; H01L31/0352 ; H01L33/44
Abstract:
Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.
Public/Granted literature
- US20210381650A1 INTERDIGITATED BACK CONTACT METAL-INSULATOR-SEMICONDUCTOR SOLAR CELL WITH PRINTED OXIDE TUNNEL JUNCTIONS Public/Granted day:2021-12-09
Information query
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