Invention Grant
- Patent Title: Sensors based on negative capacitance field effect transistors
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Application No.: US17036384Application Date: 2020-09-29
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Publication No.: US11747296B2Publication Date: 2023-09-05
- Inventor: Qing Cao , Jianshi Tang , Ning Li , Ying He
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Stosch Sabo
- Main IPC: G01N27/22
- IPC: G01N27/22 ; G01N27/414 ; G01N31/22 ; G11C11/22

Abstract:
Chemical sensors and methods of forming and making the same include an input terminal and an output terminal. A negative capacitance structure is configured to control a current passing horizontally from the input terminal to the output terminal, and has a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers. An electrode is in electrical contact with the negative capacitance structure, and is configured to change potential, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure.
Public/Granted literature
- US20210018459A1 SENSORS BASED ON NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTORS Public/Granted day:2021-01-21
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