Invention Grant
- Patent Title: Integrated circuit device, semiconductor substrate, and test system including the integrated circuit device
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Application No.: US17703535Application Date: 2022-03-24
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Publication No.: US11747393B2Publication Date: 2023-09-05
- Inventor: Daehyun Kwon , Donghee Kim , Sungoh Huh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Fish & Richardson P.C.
- Priority: KR 20210042815 2021.04.01
- Main IPC: G01R31/28
- IPC: G01R31/28 ; H01L23/48 ; H01L23/522 ; H01L25/065

Abstract:
An integrated circuit device, a semiconductor substrate, and a test system including the integrated circuit device are disclosed. The integrated circuit device includes a power terminal configured to receive a source voltage, a power via connected to the power terminal and passing through at least one of a number of layers, a number of inductive vias arranged apart from the power via and passing through at least one of the number of layers, a number of wirings connected to ends of at least some of the number of inductive vias and configured to form a coil wound in toroidal form together with the number of inductive vias, around the power via, and a test terminal configured to output an induced voltage in the coil externally of the integrated circuit device, in response to the supply of the source voltage.
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Information query