Invention Grant
- Patent Title: Method for making photolithography mask plate
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Application No.: US17144312Application Date: 2021-01-08
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Publication No.: US11747730B2Publication Date: 2023-09-05
- Inventor: Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN 1611093543.8 2016.12.01
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/48 ; G03F7/30 ; G03F1/50

Abstract:
A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.
Public/Granted literature
- US20210157239A1 METHOD FOR MAKING PHOTOLITHOGRAPHY MASK PLATE Public/Granted day:2021-05-27
Information query
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