Invention Grant
- Patent Title: Nonvolatile memory device, data storage device including the same and operating method thereof
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Application No.: US17363521Application Date: 2021-06-30
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Publication No.: US11748025B2Publication Date: 2023-09-05
- Inventor: Jee Yul Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR 20180023693 2018.02.27
- The original application number of the division: US16217682 2018.12.12
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A nonvolatile memory device may include: a memory cell array operated by a first voltage, and including a plurality of memory cells; a peripheral circuit operated by the first voltage, and configured to store data in the memory cell array or read data from the memory cell array; an operation recorder operated by a second voltage, and configured to record information on an operation being performed in the nonvolatile memory device; and a control logic operated by the first voltage, and configured to control the peripheral circuit such that the nonvolatile memory device performs an operation corresponding to a command received from an external device, and control the operation recorder to store the information on the operation being performed in the nonvolatile memory device.
Public/Granted literature
- US20210326060A1 NONVOLATILE MEMORY DEVICE, DATA STORAGE DEVICE INCLUDING THE SAME AND OPERATING METHOD THEREOF Public/Granted day:2021-10-21
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