Invention Grant
- Patent Title: Charge leakage detection for memory system reliability
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Application No.: US18053305Application Date: 2022-11-07
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Publication No.: US11749330B2Publication Date: 2023-09-05
- Inventor: Angelo Visconti , Riccardo Pazzocco , Jonathan J. Strand , Kevin T. Majerus
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C29/50

Abstract:
Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.
Public/Granted literature
- US20230114735A1 CHARGE LEAKAGE DETECTION FOR MEMORY SYSTEM RELIABILITY Public/Granted day:2023-04-13
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