Methods, systems, and devices that support techniques for programming self-selecting memory are described. Received data may include a first group of bits that each have a first logic value and a second group of bits that each have a second logic value. The first and second group of bits may be stored in a first set of memory cells and a second set of memory cells, respectively. A first programming operation for writing the second logic value to both the first and second set of memory cells and verifying whether the second logic value is written to each of the first set of memory cells, the second set of memory cells, or both may be performed. A second programming operation may write the first logic value to either the first set of memory cells or the second set of memory cells based on a result of the verification.