Invention Grant
- Patent Title: Ion implantation apparatus
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Application No.: US17468879Application Date: 2021-09-08
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Publication No.: US11749501B2Publication Date: 2023-09-05
- Inventor: Jian Wang , Shinsuke Inoue , Yuta Iwanami , Takashi Sakamoto , Weijiang Zhao
- Applicant: NISSIN ION EQUIPMENT CO., LTD.
- Applicant Address: JP Koka
- Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee Address: JP Koka
- Agency: Sughrue Mion, PLLC
- Priority: JP 20206842 2020.12.14
- Main IPC: H01J37/20
- IPC: H01J37/20 ; H01J37/317 ; H01J37/304

Abstract:
An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.
Public/Granted literature
- US20220189736A1 ION IMPLANTATION APPARATUS Public/Granted day:2022-06-16
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