Invention Grant
- Patent Title: Processing method and plasma processing apparatus
-
Application No.: US17151839Application Date: 2021-01-19
-
Publication No.: US11749503B2Publication Date: 2023-09-05
- Inventor: Takuto Yoshimura
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP 2020010847 2020.01.27
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A method performed by a plasma processing apparatus including a first electrode and a second electrode is provided. The method includes applying a pulsed wave of first radio frequency (RF) power to the first electrode or the second electrode; and applying a pulsed wave of second RF power having a lower frequency than the first RF power, to the first electrode with a given phase difference relative to the pulsed wave of the first RF power. A first on-period of the second RF power and a second on-period of the second RF power are controlled such that the first on-period and the second on-period do not overlap with a period of time while the first RF power is turned on. Also, the first on-period is controlled such that the first on-period ends just before the first RF power is turned on.
Public/Granted literature
- US20210233743A1 PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2021-07-29
Information query