Invention Grant
- Patent Title: Semiconductor substrate and method of manufacturing thereof
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Application No.: US17873122Application Date: 2022-07-25
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Publication No.: US11749526B2Publication Date: 2023-09-05
- Inventor: I-Sheng Chen , Tzu-Chiang Chen , Cheng-Hsien Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- The original application number of the division: US16006375 2018.06.12
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B29/06 ; C30B29/08 ; C30B29/66 ; C30B33/02 ; C30B33/10 ; H01L21/306 ; H01L21/308

Abstract:
A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other.
Public/Granted literature
- US20220367174A1 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2022-11-17
Information query
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