- Patent Title: Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode
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Application No.: US17736505Application Date: 2022-05-04
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Publication No.: US11749528B2Publication Date: 2023-09-05
- Inventor: Tzu-Ang Chao , Gregory Michael Pitner , Tse-An Chen , Lain-Jong Li , Yu Chao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H10K10/84 ; H10K10/46 ; H10K71/00 ; H10K71/12 ; H10K85/20
Abstract:
A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
Public/Granted literature
- US20220262635A1 Semiconductor Devices and Methods of Manufacture Public/Granted day:2022-08-18
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