Invention Grant
- Patent Title: Method of manufacturing semiconductor device by setting process chamber maintenance enable state
-
Application No.: US17556307Application Date: 2021-12-20
-
Publication No.: US11749550B2Publication Date: 2023-09-05
- Inventor: Yasuhiro Mizuguchi , Naofumi Ohashi , Tadashi Takasaki , Shun Matsui
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 19135109 2019.07.23
- Main IPC: H01L21/677
- IPC: H01L21/677 ; H01L21/67

Abstract:
Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber wherein a maintenance timing at which the process chamber enters into a maintenance enable state is determined by the maintenance reservation information; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, stopping one or more substrates including the substrate from being transferred into the process chamber, and thereafter setting the process chamber to the maintenance enable state.
Public/Granted literature
- US20220115254A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY SETTING PROCESS CHAMBER MAINTENANCE ENABLE STATE Public/Granted day:2022-04-14
Information query
IPC分类: