Invention Grant
- Patent Title: Method for non-destructive inspection of cell etch redeposition
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Application No.: US17038242Application Date: 2020-09-30
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Publication No.: US11749569B2Publication Date: 2023-09-05
- Inventor: I-Che Lee , Huai-Ying Huang , Yi Chien Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/67 ; G06T7/00 ; H10N50/01

Abstract:
Various embodiments of the present disclosure are directed towards a method for non-destructive inspection of cell etch redeposition. In some embodiments of the method, a grayscale image of a plurality of cells on a wafer is captured. The grayscale image provides a top down view of the cells and, in some embodiments, is captured in situ after etching to form the cells. The cells are identified in the grayscale image to determine non-region of interest (non-ROI) pixels corresponding to the cells. The non-ROI pixels are subtracted from the grayscale image to determine ROI pixels. The ROI pixels are remaining pixels after the subtracting and correspond to material on sidewalls of, and in recesses between, the cells. An amount of etch redeposition on the sidewalls and in the recesses is then scored based on gray levels of the ROI pixels. Further, the wafer is processed based on the score.
Public/Granted literature
- US20210351088A1 METHOD FOR NON-DESTRUCTIVE INSPECTION OF CELL ETCH REDEPOSITION Public/Granted day:2021-11-11
Information query
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