Invention Grant
- Patent Title: Method of manufacturing semiconductor package
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Application No.: US17388521Application Date: 2021-07-29
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Publication No.: US11749574B2Publication Date: 2023-09-05
- Inventor: Hiroki Katayama
- Applicant: Nippon Electric Glass Co., Ltd.
- Applicant Address: JP Shiga
- Assignee: NIPPON ELECTRIC GLASS CO., LTD.
- Current Assignee: NIPPON ELECTRIC GLASS CO., LTD.
- Current Assignee Address: JP Shiga
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 14194598 2014.09.25
- The original application number of the division: US15507876
- Main IPC: H01L23/15
- IPC: H01L23/15 ; H01L23/00 ; H01L23/12 ; H01L21/56 ; C03C3/093 ; C03C3/091 ; B32B17/06 ; C03C19/00 ; B24B37/07
Abstract:
Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 μm.
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