Invention Grant
- Patent Title: Semiconductor module and method for manufacturing same
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Application No.: US16955115Application Date: 2019-02-06
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Publication No.: US11749581B2Publication Date: 2023-09-05
- Inventor: Yuhei Nishida , Fumihiko Momose , Takashi Ideno , Yukihiro Kitamura
- Applicant: FUJI ELECTRIC CO., LTD. , DOWA METALTECH CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.,DOWA METAL TECH CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.,DOWA METAL TECH CO., LTD.
- Current Assignee Address: JP Kawasaki; JP Tokyo
- Agent Manabu Kanesaka
- Priority: JP 2018027138 2018.02.19
- International Application: PCT/JP2019/004302 2019.02.06
- International Announcement: WO2019/159798A 2019.08.22
- Date entered country: 2020-06-18
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/48 ; H01L23/053 ; H01L23/31 ; H01L23/00 ; H01L25/07 ; H01L23/495 ; H01L25/16

Abstract:
Provided are a semiconductor module in which bonding properties between an insulated substrate and a sealing resin is improved and a method for manufacturing the semiconductor module. A semiconductor module 50 is provided with: an insulated substrate 23; a circuit pattern 24 that is formed on the insulated substrate; semiconductor elements 25, 26 that are joined on the circuit pattern; and a sealing resin 28 for sealing the insulated substrate, the circuit pattern, and the semiconductor elements. The surface 23a of the insulated substrate in a part where the insulative substrate and the sealing resin are bonded to each other, is characterized in that, in a cross section of the insulated substrate, the average roughness derived in a 300-μm wide range is 0.15 μm or greater and the average roughness derived in a 3-μm-wide range is 0.02 μm or greater.
Information query
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